The use of silicon–germanium as a semiconductor was championed by . The challenge that had delayed its realization for decades was that germanium atoms are roughly 4% larger than silicon atoms. At the usual high temperatures at which silicon transistors were fabricated, the strain induced by adding these larger atoms into crystalline silicon produced vast numbers of defects, precluding the resulting material being of any use. Meyerson and co-workers discovered that the then.
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